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INTEGRATED CIRCUITS
DATA SHEET
TDA8591J 4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
Preliminary specification File under Integrated Circuits, IC01 2002 Jan 14
Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
CONTENTS 1 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 13 13.1 14 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 FEATURES GENERAL DESCRIPTION ORDERING INFORMATION QUICK REFERENCE DATA BLOCK DIAGRAM PINNING FUNCTIONAL DESCRIPTION Diagnostic facility Diagnostic output (DIAG) Mute timer and single-pin mute control Output power LIMITING VALUES THERMAL CHARACTERISTICS QUALITY SPECIFICATION DC CHARACTERISTICS AC CHARACTERISTICS Performance curves TEST INFORMATION Protection circuit testing APPLICATION INFORMATION Special attention for SMD input capacitors Capacitors on outputs EMC precautions Offset detection Channel selection Detection of short-circuits PCB layout PCB design advice 15 16 16.1 16.2 16.3 16.4 17 18 19 PACKAGE OUTLINE SOLDERING
TDA8591J
Introduction to soldering through-hole mount packages Soldering by dipping or by solder wave Manual soldering Suitability of through-hole mount IC packages for dipping and wave soldering methods DATA SHEET STATUS DEFINITIONS DISCLAIMERS
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
1 FEATURES
TDA8591J
* All outputs can withstand short-circuits to ground, to the positive supply voltage and across the load * Pin CP can withstand short-circuits to its adjacent pins, all other pins can withstand short-circuits to ground and to the positive supply voltage * ESD protection on all pins * Thermal protection against junction temperatures exceeding 150 C * Load dump protection * Protected against open ground pins (loss of ground) and outputs short-circuited to supply ground * All negative outputs are protected against open supply voltage and output short-circuited to supply voltage * Reverse-polarity safe. 2 GENERAL DESCRIPTION
* Low quiescent current * Low distortion * Low output offset voltage * Soft thermal clipping to prevent audio holes * External mute timer for low start-up plop (also allows a fast mute function) * High output power * Operating, mute and standby mode selection by two-pin or single-pin operation * Diagnostic information available: - Dynamic Distortion Detection (DDD) - High temperature detection - Short-circuit detection - Detection of output offset due to leakage current at the input * No switch-on/switch-off plops when switching between standby and mute modes or between mute and operating modes * Fast mute with supply voltage drops * Package with flexible leads 3 ORDERING INFORMATION TYPE NUMBER TDA8591J
The TDA8591J is a quad BTL audio power amplifier comprising four independent amplifiers in Bridge Tied Load (BTL) configuration. Each amplifier has a gain of 26 dB and supplies an output power of 75 W (EIAJ) into a 2 load. The TDA8591J has low quiescent current and is primarily developed for car audio applications.
PACKAGE NAME DBS27P DESCRIPTION plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm) VERSION SOT521-1
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
4 QUICK REFERENCE DATA SYMBOL VP Iq(tot) Istb Zi Po PARAMETER supply voltage total quiescent current standby supply current input impedance output power THD + N = 0.5% RL = 4 RL = 2 THD + N = 10% RL = 4 RL = 2 EAIJ values RL = 4 RL = 2 VOO Gv THD + N cs Vn(o) SVRR output offset voltage voltage gain total harmonic distortion plus noise channel separation noise output voltage supply voltage ripple rejection mute mode DC operating mode Vi = 40 mV (RMS) Po = 1 W; f = 1 kHz; RL = 4 Vi = 40 mV (RMS); Rs = 0 Rs = 0 ; see Fig.29 Vripple = 2 V (p-p); mute or operating mode; Rs = 0 ; see Fig.29 41.5 - - - 25 - 56 - 54 44 75 - - 26 0.03 68 70 68 27 - 28 47 19 - 22 34 CONDITIONS MIN. 8.0 120 - - TYP. 14.4 200 2 70
TDA8591J
MAX. 18.0 290 50 - - - - - - - 30 60 27 0.1 - - -
UNIT V mA A k W W W W W W mV mV dB % dB V dB
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
5 BLOCK DIAGRAM
TDA8591J
handbook, full pagewidth
VP VP1 1 IN1 10 26 dB 5 OUT1+ VP2 13 VP3 15 3 OUT1-
9 26 dB IN2 12 VP 11
OUT2+
OUT2-
TDA8591J
CIN 22
CHARGE PUMP
14
CP
SGND IN3
2 16 26 dB 17 OUT3- 19
OUT3+
25 26 dB IN4 STBY MUTE/ON 18 20 8 INTERFACE 23
OUT4-
OUT4+
OFFSET DETECTION
DIAGNOSTIC
6
DIAG
26 4 PGND1 7 PGND2 21 PGND3 24 PGND4 27
MGW449
OFFCAP
GNDHS
Fig.1 Block diagram.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
6 PINNING SYMBOL VP1 SGND OUT1- PGND1 OUT1+ DIAG PGND2 MUTE/ON OUT2+ IN1 OUT2- IN2 VP2 CP VP3 IN3 OUT3- IN4 OUT3+ STBY PGND3 CIN OUT4+ PGND4 OUT4- OFFCAP GNDHS PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 DESCRIPTION power supply to channels 1 and 4 signal ground channel 1 negative output channel 1 power ground channel 1 positive output diagnostic output channel 2 power ground mode select input: mute/amplifier operating (via mute timer) channel 2 positive output channel 1 input channel 2 negative output channel 2 input channel 2 power supply charge pump capacitor channel 3 power supply channel 3 input channel 3 negative output channel 4 input channel 3 positive output standby select input channel 3 power ground common input voltage channel 4 positive output channel 4 power ground channel 4 negative output offset detection capacitor ground (heatsink of encapsulation)
PGND3 21 CIN 22 OUT4+ 23 PGND4 24 OUT4- 25 OFFCAP 26 GNDHS 27
handbook, halfpage
TDA8591J
VP1 SGND OUT1- PGND1 OUT1+ DIAG PGND2 MUTE/ON OUT2+
1 2 3 4 5 6 7 8 9
IN1 10 OUT2- 11 IN2 12 VP2 13 CP 14 VP3 15 IN3 16 OUT3- 17 IN4 18 OUT3+ 19 STBY 20
TDA8591J
MGW450
Fig.2 Pin configuration.
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
7 FUNCTIONAL DESCRIPTION
TDA8591J
* All outputs protected are against open power supply pins and outputs short-circuited to power supply voltage (see Fig.31) * With a reversed polarity power supply an external diode conducts and a fuse blows and therefore the reversed polarity voltage will not damage the device (see Fig.32). 7.1 Diagnostic facility
The TDA8591J is an audio power amplifier with four independent Bridge Tied Load (BTL) amplifiers with high output power and low distortion. The gain of each amplifier is fixed at 26 dB. The TDA8591J has two-pin mode control which allows the amplifiers to be switched to standby (off) with the STBY pin, and the MUTE/ON pin to be used to switch between mute mode (input signal suppressed) and amplifier operating mode. Special attention is paid to dynamic behaviour: * A fast mute that switches all amplifiers to mute mode at low supply voltage and suppresses noise during engine start * No plops when switching between standby and mute modes * Slow offset change when switching from mute mode to operating mode (can be adjusted by an external capacitor) * A fast mute function by discharging the external mute capacitor quickly The following protection circuits are included to prevent the IC from being damaged: * Thermal shutdown: At junction temperature Tvj > 170 C, all power stages are switched off to prevent a further increase in temperature * Soft thermal clipping: At junction temperature Tvj > 155 C, the gain reduces as temperature increases, resulting in less output power and decreasing temperature and therefore no thermal shutdown (no break in the audio) * Short-circuit protection: If a short-circuit to ground or supply voltage occurs at one or more of the output pins, or across the load of one or more of the channels, the following action occurs to reduce power dissipation and case temperature (see Figs 5 and 6): - All amplifiers switch off for approximately 20 ms - After 20 ms the amplifiers switch on again - If the short-circuit persists, the amplifiers switch off for another 20 ms period and the action repeats * ESD protection: - Human body model 2000 V - Machine model 200 V * Protection against open ground pins and outputs short-circuited to supply ground (see Fig.30) 2002 Jan 14 7
A diagnostic facility is available from the status of pin DIAG for the following conditions: * In normal operation, the level on the DIAG pin is continuously HIGH (see Fig.3) * When a temperature pre-warning occurs due to the junction temperature Tvj reaching 145 C, the DIAG pin goes continuously LOW * When there is distortion over 2.5% because of clipping, the DIAG pin has a pulsed output as shown in Fig.4 * When a short-circuit is detected, the short-circuit protection becomes active and DIAG goes continuously LOW for the period of the short-circuit (see Figs 5 and 6) * With an extreme output offset, input leakage current causes a DC output offset voltage and results in power dissipation in the loudspeakers. Therefore, if the DC output offset voltage of a bridge is larger than 2 V, DIAG is pulled LOW to indicate an error condition. The DIAG pin has an open-drain output to allow several devices to be tied together. An external pull-up resistor is needed.
Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
MGU489
handbook, halfpage
MGT605
play normal DIAG DIAG MUTE/ON STBY amplifier output mute operating amplifier output normal
active DDD
normal
standby
t (ms) t (ms)
Pull-up resistor = 47 k.
Pull-up resistor = 47 k.
Fig.3
Diagnostic waveforms: standby, mute and operating mode sequence.
Fig.4
Diagnostic waveforms: dynamic distortion detection function.
handbook, halfpage
short-circuit across load
MGT604
andbook, halfpage
MGU498
short to GND DIAG
short to VP
DIAG
20 ms amplifier output
VP amplifier output GND t (ms) t (ms) 20 ms 20 ms
Pull-up resistor = 47 k.
Pull-up resistor = 47 k.
Fig.5
Diagnostic waveforms: short-circuit across load.
Fig.6
Diagnostic waveforms: short-circuit to VP pin or GND.
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
7.2 Diagnostic output (DIAG)
TDA8591J
With reference to Figs 7 and 8c, the truth table in Table 1 can be made: Table 1 Truth table. OFFSET no yes don't care IN1 1 0 0 IN2 1 1 0
The internal circuit of the diagnostic open-drain output is shown in Fig.7. A pull-up resistor is required if the diagnostic output is connected to a microcontroller. Figure 8 shows four possible solutions for fault diagnosis. Figures 8a and 8b show simple configurations. The output offset diagnostic cannot trigger the microcontroller because of the 4-diode stack, only the temperature, short-circuit and dynamic distortion diagnostic will give an input LOW level for the microcontroller. In Fig.8c, the diagnostic output is connected to an external level shifter. Now DIAG pin output can also generate an input LOW level for the microcontroller. Assuming that a microcontroller HIGH input level must be equal to, or greater than 2 V, the following equations are used to calculate values for resistors R1 and R2: VIN1 > 2 V and V IN1 where: 5 V is the pull-up supply voltage Vd is the forward voltage of a diode (0.6 V) R1 and R2 are the resistors in the level shifter. 2 x R2 Using both equations: R1 > --------------------------------------5 V - 4 x Vd - 2 thus R1 > 3.3 R2 Therefore, R1 can be 47 k and R2 can be 10 k. The level shifter shown in Fig.8d is used as a 2-bit analog-to-digital converter. 5 V - 4 x Vd = 5 V - 4 x V d - R2 x ------------------------------ R1 + R2 -
HIGH TEMPERATURE OR SHORT-CIRCUIT OR DDD no no yes
handbook, halfpage
DIAG
temperature diagnostic short-circuit diagnostic dynamic distortion detection
1
output offset diagnostic
PGND
MGT610
Fig.7 Internal circuit diagnostic output pin DIAG.
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
handbook, halfpage
MICROCONTROLLER V R DIAG DIAG V R MICROCONTROLLER
MGU513
MGU514
a. Internal pull-up.
b. External pull-up.
handbook, halfpage
5V R2
handbook, halfpage
5V R2
DIAG
DIAG
IN2
MICROCONTROLLER IN1 R1
MGU515
MICROCONTROLLER IN1 R1
MGU516
c. Level shifter.
d. Two-pin diagnostics.
Fig.8 Connecting the DIAG output to a microcontroller input.
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
7.3 Mute timer and single-pin mute control
TDA8591J
The reason for using a square wave input signal for EIAJ power measurement is illustrated in Fig.9. Figure 9a shows a square wave signal with V top slew rate = --------tr Assuming this square wave is the output signal of an amplifier, the EIAJ output power is given by 8 2 1 - -- x V top x f 3 V top = ------------- x -----------------------------------------slew rate RL
The transition time from mute mode to operating mode can be used to hide plops that occur during switching. This transition time is determined by the value of the external capacitor at the MUTE/ON input (see Fig.33). To guarantee the mute suppression, the resistor value may not be more than 15 k. The switching can be controlled by a transistor switch with an open-drain output or a voltage output with a minimum high level of 5.5 V. When controlling with an open-drain output, the high voltage level also must be at least 5.5 V and should not be clamped on a lower value by the ESD diode of the microcontroller. If the minimum high voltage cannot be guaranteed, an external open-drain transistor or switch to ground can be used. Charging of the external capacitor at the MUTE/ON input is done by an internal current source. If muting is performed by the microcontroller, the mute connection to the microcontroller can be omitted. The mute on and off transitions during start-up and switch-off are controlled by an internal push-pull current source and the external capacitor at pin 8 (MUTE/ON). Fast mute can be achieved by quickly discharging the mute capacitor by means of an open-drain transistor without a series resistor. 7.4 Output power
P EIAJ
where: RL = load resistor in Vtop = maximum voltage across the load in V f = frequency of the square wave in Hz tr = rise time of the slope in s. A sine wave has a lower slew rate than a square wave as shown in Fig.9b, therefore EIAJ power measurement with a sine wave will give a lower power value. The maximum slew rate of a sine wave output signal is given by U out ( A x sin ( 2f x t ) ) ----------------- = ----------------------------------------------- = 2f x A t max t max where: A = amplitude of the output sinewave in V f = frequency of the output sinewave in Hz. For a non-clipping sinewave output with amplitude A = 13 V and frequency f = 1 kHz, the slew rate is U out 3 ----------------- = 82 V/s t max A faster slew rate can be obtained by increasing the amplitude: for an amplitude of 28 V, the slew rate will increase to 1.85 V/s. A supply voltage of VP = 14.4 V will result in a clipped output with a shape similar to a square wave but with a slower slew rate. Figure 9c shows the dependency of PEIAJ on slew rate. Using a square wave input signal, the EIAJ output power is determined by the drop voltage and bandwidth of the output stage.
EIAJ power is a power rating which indicates the maximum possible output power of a specific application at a nominal supply voltage. The power losses caused by PCB layout, copper area, connector block, coil, loudspeaker wires, etc. depend on the applications. Therefore, the EIAJ power is defined and measured at the pins of the IC using the following test conditions: * The supply voltage is 14.4 V measured on the pins of the TDA8591J * All channels are loaded with 4 and are driven simultaneously * The input signal is a continuous (no burst) square wave: V = 1 V (RMS); f = 1 kHz * RMS output power is measured immediately at the start (cold heatsink) and after 1 minute of operation. The mean value is the rated EIAJ power. To have optimum output power performance, the external heatsink should be chosen carefully. A small heatsink causes a high junction temperature, resulting in an increase of the drain-source on-state resistance (RDSon) of the power amplifiers and a decrease of the maximum output power. 2002 Jan 14 11
Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
tr
Vtop
a.
T = 1/f
MGT612
handbook, halfpage
Vtop tr
b.
T = 1/f
MGT613
handbook, halfpage
45
MGT614
PEIAJ (W) 44
(1)
43
(2)
42
41
c.
0
2
4
6
8 SR (V/s)
10
(1) PEIAJ(max) (infinite slew rate). (2) Maximum slew rate of TDA8591J.
Fig.9
Comparison of sine wave and square wave RMS powers.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER supply voltage operating not operating VDIAG IOSM IORM Vsc Vrp Ptot Tvj Tstg Tamb Vesd voltage on pin DIAG non-repetitive peak output current repetitive peak output current AC and DC short-circuit voltage reverse polarity voltage total power dissipation virtual junction temperature storage temperature ambient temperature electrostatic handling voltage note 1 note 2 Notes short-circuit of output pins across loads and to ground or supply t 1 ms Tcase = 70 C CONDITIONS - -1 - - - - - - - -55 -40 2000 200 MIN.
TDA8591J
MAX. 18 +45 45 45 10 6 18 6 80 150 +150 +85 - -
UNIT V V V V A A V V W C C C V V
with load dump protection (see Fig.10) -
1. Human body model: C = 100 pF; Rs = 1500 ; all pins have passed all tests to 2500 V to guarantee 2000 V, according to "General Quality Specification SNW-FQ-611D", class II, except pin GND, which passed 2200 V, class Ia. 2. Machine model: C = 200 pF; Rs = 10 ; L = 0.75 mH.
handbook, halfpage
MGT601
45 VP (V)
14.4
tr >2.5 ms
tf >47.5 ms
t
Fig.10 Load dump pulse definition.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
9 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-c) PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air see Fig.11
TDA8591J
VALUE 40 1
UNIT K/W K/W
handbook, halfpage
virtual junction OUT2 OUT3 OUT4
OUT1
2 K/W
2 K/W
2 K/W
2 K/W
0.5 K/W
case
MGT602
Fig.11 Equivalent thermal resistance network.
10 QUALITY SPECIFICATION Quality according to "SNW-FQ-611E". 11 DC CHARACTERISTICS Tamb = 25 C; RL = ; VP = VP1 = VP2 = VP3 = 14.4 V; measured in the circuit of Fig.29; unless otherwise specified. SYMBOL Supplies VP Iq(tot) Istb VO VP(mute) VP(mute)(hys) VOO supply voltage total quiescent current standby current DC output voltage low supply voltage mute low supply voltage mute hysteresis output offset voltage mute mode; VMUTE/ON = 0 V operating to mute mode mute to operating mode 8.0 120 - - 6.0 6.3 - - 14.4 200 2 7.2 7.0 7.0 0.4 0 0 18.0 290 50 - 8.0 8.5 - 30 60 V mA A V V V V mV mV PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
operating mode; VMUTE/ON = 5 V -
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
SYMBOL PARAMETER CONDITIONS MIN. - 0.2 - - - 25 TYP.
TDA8591J
MAX.
UNIT
STBY and MUTE/ON inputs (see Table 2) VSTBY VSTBY(hys) VMUTE/ON control voltage on pin STBY standby mode voltage hysteresis on pin STBY voltage on pin MUTE/ON mute mode; VSTBY > 2.5 V operating mode; VSTBY > 2.5 V; note 1 ISTBY IMUTE/ON VDIAG STBY pin current MUTE/ON pin current VSTBY = 5 V VMUTE/ON = 5.5 V IDIAG(sink) = 250 A DDD, protection circuits and temperature pre-warning active offset diagnostic active IL THD VOO(det) Tvj leakage current total harmonic distortion at clip detection output offset voltage detection; note 2 virtual junction temperature VDIAG = 14.4 V VDIAG < 0.8 V 2.0 < VDIAG < 3.2 V temperature pre-warning; VDIAG < 0.8 V soft thermal clipping; Gv = -3 to -23 dB temperature shut-down Notes 1. With open MUTE/ON pin, the TDA8591J will switch to operating mode (see Section 7.3) 2. VOO(det) is the offset voltage across the load. Pin OFFCAP should never be left open-circuit. If pin OFFCAP is connected to one of the PGND pins, the offset detection is switched off (see Section 14.4). Table 2 Mode selection STBY 0 1 1 MUTE/ON don't care 0 1 AMPLIFIER MODE standby (off) mute (DC settled) operating - 0.3 0.8 V 0 - - 5.5 - - 0.8 - 0.8 VP 80 - V V V V A A
DIAG output (see Figs 3 to 6) diagnostic output voltage
2.0 - - 2.5 135 - -
2.8 - 1.5 4.5 145 155 170
3.2 1 - 6.5 - - -
V A % V C C C
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
12 AC CHARACTERISTICS
TDA8591J
VP = VP1 = VP2 = VP3 = 14.4 V; RL = 4 ; f = 1 kHz; Tamb = 25 oC; measured in the circuit of Fig.29; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS THD + N = 0.5 % RL = 4 RL = 2 THD + N = 1 %; RL = 2 THD + N = 10 % RL = 4 RL = 2 EIAJ values RL = 4 RL = 2 Gv THD + N cs Gv Vn(o) voltage gain total harmonic distortion plus noise channel separation channel unbalance noise output voltage Rs = 0 ; note 1 operating mode mute mode Vo(mute) SVRR Zi CMRR BP fro(l) fro(h) Notes 1. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz. 2. The frequency response is fixed with external components. output voltage in mute mode supply voltage ripple rejection input impedance common mode rejection ratio power bandwidth low frequency roll-off high frequency roll-off mute mode; Vi = 1 V (RMS) Vripple = 2 V (p-p); mute or operating mode; Rs = 0 Vi 3 V (RMS) Rs = 0 ; Vcm = 0.35 V (RMS) - - - 54 60 - 70 16 16 68 70 70 20 to 20000 25 300 110 - 30 - - - - - - V V V dB k dB Hz Hz kHz Vi = 40 mV (RMS) Po = 1 W; f = 1 kHz Po = 10 W; f = 10 kHz Vi = 40 mV (RMS); Rs = 0 41.5 - 25 - - 56 - 44 75 26 0.03 0.2 68 - - 27 0.1 - - 1 W W dB % % dB dB 27 - 28 47 - - W W 20 - - 22 34 35 - - - W W W MIN. TYP. MAX. UNIT
THD + N = 0.5%; Po = -1 dB - with respect to 17 W at -1 dB; note 2 at -1 dB - 150
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
12.1 Performance curves
TDA8591J
Conditions for Figs 12 to 28 unless otherwise specified are: VP = 14.4 V; RL = 4 : f = 1 kHz; 80 kHz filter.
handbook, halfpage
300
MGW457
handbook, halfpage
30
MGW458
IP (mA) 200
Gv (dB)
28
26
24 100 22
0 0 RL = . 10 20 VP (V) 30
20 10 Vi = 10 mV.
102
103
104
105
f (Hz)
106
Fig.12 Supply current as a function of supply voltage.
Fig.13 Voltage gain as a function of frequency.
handbook, halfpage
80
MGW459
handbook, halfpage
Po (W) 60
120 Po (W) 100
MGW460
80
(1) (1)
40
60
(2) (2)
40
(3)
20
(3)
20
0 9 10 11 12 13 14 15 16 17 VP (V) 18
0 9 10 11 12 13 14 15 16 17 VP (V) 18
One channel driven. (1) EIAJ values. (2) THD + N = 10%. (3) THD + N = 1%.
One channel driven. (1) EIAJ values. (2) THD + N = 10%. (3) THD + N = 1%.
Fig.14 Output power as a function of supply voltage; RL = 4 .
Fig.15 Output power as a function of supply voltage; RL = 2 .
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
cs (dB)
0
MGW461
handbook, halfpage
cs (dB)
0
MGW462
-20
-20
-40
(1)
-40
-60
(2) (3)
-60
(1)
(2)
-80
-80
(3)
-100 10
102
103
104
f (Hz)
105
-100 10
102
103
104
f (Hz)
105
Po = 1 W. (1) Separation between channels 1 and 3. (2) Separation between channels 1 and 4. (3) Separation between channels 1 and 2.
Po = 1 W. (1) Separation between channels 2 and 1. (2) Separation between channels 2 and 3. (3) Separation between channels 2 and 4.
Fig.16 Channel separation as a function of frequency; channel 1 driven.
Fig.17 Channel separation as a function of frequency; channel 2 driven.
handbook, halfpage
cs
0
MGW463
handbook, halfpage
cs
0
MGW464
(dB) -20
(dB) -20
-40
(1) (2) (3)
-40
(1) (2) (3)
-60
-60
-80
-80
-100 10
102
103
104
f (Hz)
105
-100 10
102
103
104
f (Hz)
105
Po = 1 W. (1) Separation between channels 3 and 1. (2) Separation between channels 3 and 2. (3) Separation between channels 3 and 4.
Po = 1 W. (1) Separation between channels 4 and 1. (2) Separation between channels 4 and 2. (3) Separation between channels 4 and 3.
Fig.18 Channel separation as a function of frequency; channel 3 driven.
Fig.19 Channel separation as a function of frequency; channel 4 driven.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
102 handbook, halfpage THD + N (%) 10
MGW465
102 handbook, halfpage THD + N (%) 10
MGW467
1
(1)
1
(1)
10 -1
(2)
10 -1
(2) (3)
10 -2 10 -2
(3)
10 -1
1
10 Po (W)
102
10 -2 10 -2
10 -1
1
10 Po (W)
102
(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
Fig.20 Total harmonic distortion plus noise as a function of output power; RL = 4 .
Fig.21 Total harmonic distortion plus noise as a function of output power; RL = 2 .
102 handbook, halfpage THD + N (%) 10
MGW466
102 handbook, halfpage THD + N (%) 10
MGW468
1
1
10 -1
(1)
10 -1
(1)
(2)
(2)
10 -2 10
102
103
104
f (Hz)
105
10 -2 10
102
103
104
f (Hz)
105
(1) Po = 1 W. (2) Po = 10 W.
(1) Po = 1 W. (2) Po = 10 W.
Fig.22 Total harmonic distortion plus noise as a function of frequency; RL = 4 .
Fig.23 Total harmonic distortion plus noise as a function of frequency; RL = 2 .
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
15
MGW469
handbook, halfpage
30
MGW470
P (W) 10
P (W) 20
5
10
0 10-3
10-2
10-1
1
10 Po (W)
102
0 10-3
10-2
10-1
1
10 Po (W)
102
Sine wave input; one channel driven.
Sine wave input; one channel driven.
Fig.24 Power dissipation as a function of output power; RL = 4 .
Fig.25 Power dissipation as a function of output power; RL = 2 .
handbook, halfpage
15
MGW471
handbook, halfpage
30
MGW472
P (W) 10
P (W) 20
5
10
0 10-3
10-2
10-1
1
10 Po (W)
102
0 10-3
10-2
10-1
1
10 Po (W)
102
IEC60268 filtered noise; one channel driven.
IEC60268 filtered noise; one channel driven.
Fig.26 Power dissipation as a function of output power; RL = 4 .
Fig.27 Power dissipation as a function of output power; RL = 2 .
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, halfpage
0
MGW473
SVRR (dB) -20
-40
-60
-80
10
102
103
104
f (Hz)
105
Vripple = 2 V (p-p).
Fig.28 Supply voltage ripple rejection as a function of frequency.
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
13 TEST INFORMATION
TDA8591J
handbook, full pagewidth
100 nF VP1 1 Rs 220 nF IN1 10 26 dB VP2 13 VP3 15
Vcm
2200 F (16 V)
VP
3 OUT1-
22 nF 4 22 nF
Vin1
5 OUT1+
9 OUT2+ 26 dB IN2 12 VP
22 nF 4 22 nF
Rs Vin2
220 nF
11 OUT2-
TDA8591J
CIN 100 F (6.3 V) SGND 2 Rs Vin3 220 nF IN3 16 26 dB 22
CHARGE PUMP
14 CP 220 nF
19 OUT3+
22 nF 4 22 nF
17 OUT3-
25 OUT4- 26 dB IN4 18 STBY MUTE/ON 20 8 INTERFACE
22 nF 4 22 nF
Rs Vin4
220 nF
23 OUT4+
+5 V 10 k
OFFSET DETECTION
DIAGNOSTIC
6
DIAG
26 OFFCAP 4 PGND1 7 PGND2 21 PGND3 24 PGND4 27 GNDHS
MGW451
Fig.29 Test circuit.
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
13.1 Protection circuit testing
TDA8591J
handbook, full pagewidth
>100 H
VP
TDA8591J OUT- IN 4700 F OUT+
(1)
STBY
-
GND battery
14.4 V
+
MGW453
One channel output shown. At the start of the test, the 4700 F capacitor should be discharged. The amplifier is in standby during test. (1) Cable length is 1 metre, cable diameter is 1.5 mm.
Fig.30 Open ground pin test set-up.
handbook, full pagewidth
>100 H
VP
TDA8591J
(1)
OUT- IN 4700 F OUT+
STBY
-
GND battery
14.4 V
+
MGW454
One channel output shown. At the start of the test, the 4700 F capacitor should be discharged. The amplifier is in standby during test. (1) Cable length is 1 metre, cable diameter is 1.5 mm.
Fig.31 Open power supply (pin VP) test set-up.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, full pagewidth
>100 H
fuse
VP
TDA8591J OUT- IN 4700 F OUT+ e.g.BZW03C18
(1)
-
GND battery
14.4 V
+
MGW455
(1) Cable length is 1 metre, cable diameter is 1.5 mm.
Fig.32 Reversed polarity power supply test set-up.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
14 APPLICATION INFORMATION
VP
TDA8591J
handbook, full pagewidth
100 nF VP1 1 Rs Vin1 220 nF IN1 10 26 dB VP2 13 VP3 15
2200 F (16 V)
3 OUT1-
22 nF 2 or 4 22 nF
5 OUT1+
9 OUT2+ 26 dB IN2 12 VP
22 nF 2 or 4 22 nF
Rs Vin2
220 nF
11 OUT2-
TDA8591J
CIN 100 F (6.3 V) SGND 2 Rs Vin3 220 nF IN3 16 26 dB 22
CHARGE PUMP
14 CP 220 nF
19 OUT3+
22 nF 2 or 4 22 nF
17 OUT3-
25 OUT4- 26 dB IN4 18 STBY 20 MUTE/ON 8 standby from microcontroller mute fast mute
(1)
22 nF 2 or 4 22 nF
Rs Vin4
220 nF
23 OUT4+
INTERFACE
OFFSET DETECTION
DIAGNOSTIC
6
DIAG
to microcontroller
26 OFFCAP 2.2 F (10 V) 4 PGND1 7 PGND2 21 PGND3 24 PGND4 27 GNDHS
MGW452
(1) Not needed with single-pin mute control.
Fig.33 Quad BTL application without offset detection circuit.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, full pagewidth
100 nF VP1 1 Rs Vin1 220 nF IN1 10 26 dB VP2 13 VP3 15
2200 F (16 V)
VP
3 OUT1-
22 nF 2 or 4 22 nF 220 k
5 OUT1+
9 OUT2+ 26 dB IN2 12 VP
22 nF
220 k
Rs Vin2
220 nF
11 OUT2-
2 or 4 22 nF
TDA8591J
CIN 100 F (6.3 V) SGND 2 Rs Vin3 220 nF IN3 16 26 dB 22
CHARGE PUMP
14 CP 220 nF
19 OUT3+
22 nF 2 or 4 22 nF 220 k
17 OUT3-
25 OUT4- 26 dB IN4 18 STBY 20 MUTE/ON 8 standby from microcontroller mute fast mute
(1)
22 nF
220 k
Rs Vin4
220 nF
23 OUT4+
2 or 4 22 nF
INTERFACE
2 k
2 k
OFFSET DETECTION
DIAGNOSTIC
6
DIAG 1 F
to microcontroller
26 OFFCAP 2.2 F (10 V) 4 PGND1 7 PGND2 21 PGND3 24 PGND4 27 GNDHS
MGW476
(1) Not needed with single-pin mute control.
Fig.34 Quad BTL application with offset detection circuit.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
14.1 Special attention for SMD input capacitors
TDA8591J
The loop area of the capacitor connected to pins CP and PGND2 should be kept as small as possible. For optimum performance the capacitor used should have a good frequency performance, for example an SMD ceramic capacitor. See Figs 35 and 36 for a good PCB layout. 14.4 Offset detection
When SMD capacitors are used as input capacitors, low frequency noise can occur due to stress on the PCB. The SMD capacitors can operate like small microphones with sensitivity of 1f. Special attention should be paid to this issue when selecting SMD capacitors at the four inputs (MKT capacitors are recommended). 14.2 Capacitors on outputs
The TDA8591J is optimized for a capacitor of 22 nF from each output to ground for RF immunity and ESD. These capacitors can be replaced by the capacitors on the connector block. 14.3 EMC precautions
As shown in Fig.34, to obtain the DC offset information, an output from each bridge is summed and filtered through external 220 k resistors and a 1 F capacitor at pin OFFCAP. The low frequency roll-off can be chosen with the resistor/capacitor combination. Because of the random phase of the DC offset voltage, the capacitor on pin OFFCAP should not be a conventional electrolytic capacitor as leakage current in this capacitor would cause a shift in low frequency roll-off because of no pre-biasing. If the offset detection is not used, pin OFFCAP can be connected to ground, the external components (resistors of 220 k and 2 k and the capacitor of 1F) are not needed and the circuit is as shown in Fig.33. 14.5 Channel selection
The TDA8591J has an all N-type DMOS output stage. The main advantage of having the same type of power transistors in the output stage is symmetrical behaviour for positive and negative signals (sound quality). A charge pump (DC to DC converter with capacitors only) is used to generate a voltage above the battery voltage to drive the high-side power. The clock frequency of the charge pump (2.9 MHz) is chosen above the AM frequency band. To prevent possible crosstalk in the FM frequency band, a SIL pad can be used between the rear of the TDA8591J and the heatsink. This SIL pad is an electrical isolator and thermal conductor. It is advisable to connect the power supply lines of the TDA8591J directly to the power supply on the printed circuit board of the radio, so that a one-point earth bonding with the tuner supply is achieved. The external capacitor of the charge pump (connected to pin CP) filters and buffers the voltage generated internally. 14.6 Detection of short-circuits
The following recommendation for a four channel application is given on the basis of the results of the channel separation measurements and the dissipation spread within the package: Front-left = OUT1 Rear-left = OUT2 Rear-right = OUT3 Front-right = OUT4.
Table 3
Detection of short-circuits in standby, mute and operating modes. AMPLIFIER MODE SHORT-CIRCUIT ACROSS LOAD no diagnosis the value of short-circuit that activates diagnosis and protection depends on the output offset voltage diagnosis and active protection if short-circuit <0.4 SHORT-CIRCUIT TO SUPPLY OR GROUND no diagnosis no diagnosis and no active protection if short-circuit >100 no diagnosis and no active protection if short-circuit >100
Standby Mute (no output signal)
Operating (output signal present)
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
14.7 PCB layout
TDA8591J
handbook, full pagewidth
85.1
39.4
GND 8-18V VP Out1 diag gnd Out2 Out3 Out4 2.2 F
sgnd
float
On In3 In4 Off
Mute
TDA8591J
PCB sgnd
In1 gnd
In2
MGW474
Dimensions in mm.
Fig.35 PCB layout (component side).
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
TDA8591J
handbook, full pagewidth
85.1
39.4
220 nF 27 22 nF 22 nF 22 nF 22 nF
220 nF
47 k GND VP
22 nF 22 nF 22 nF 22 nF
1 F
220 k 2 k 2 k
220 k
220 k
220 k
15 k
47 k
MGW475
Dimensions in mm.
Fig.36 PCB layout (soldering side).
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
14.8 PCB design advice
TDA8591J
handbook, full pagewidth
VP 8 to 18 V
2200 F (16 V) 220 nF (1)
GND
47 k
(4)
47 k
220 nF (2)
15 k
2.2 F (6.3 V)
1 13 15 3.3 nF DIAG
(6) (7) (5)
14
7
4 21 24 27 8 3
(3)
20 6
OUT1-
(8) 22 nF
100 F PCB SGND (6.3 V) 220 nF IN1 220 nF IN2 220 nF IN3 220 nF IN4
2 22
5 22 nF 9
OUT1+
OUT2+ 22 nF OUT2- 22 nF
TDA8591J
10
11
19 12 17 16 25 18 23 26 R R R R 2 k 2 k 22 nF 22 nF 22 nF 22 nF
OUT3+ OUT3-
OUT4+ OUT4-
MGW456
(9)
C = 0.22 R
(1) Power supply high frequency capacitor to be mounted close to the IC. An SMD component is recommended. (2) Charge pump capacitor to be mounted close to the IC between pins 14 and 7. (3) Switch closed is the mute mode. (4) Switch open is the standby mode. A 3.3 nF capacitor has been added to provide a smooth offset detection diagnostic. Diagnostic output is less than 0.8 V when DDD or temperature pre-warning or protection circuits are activated. Signal ground switch is closed if the source is floating. Avoid ground loops in the input signal path. Keep inputs and signal ground close together. The 22 nF capacitors on the outputs can be replaced by the capacitor on the connector block to ground, where it is often used for RF immunity and ESD suppression. (9) Offset detection: if R = 100 k then C = 2.2 nF; if R = 220 k then C = 1 F. An electrolytic capacitor is not allowed because of the random phase of the DC offset. (5) (6) (7) (8)
Fig.37 PCB design advice.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
15 PACKAGE OUTLINE DBS27P: plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm)
TDA8591J
SOT521-1
non-concave x Dh
D Eh
view B: mounting base side
d
A2
A5 A4
B j E1 E A
L3 L 1 Z e e1 bp wM 27 Q m c e2 vM
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A2 A4 A5 bp c D (1) d Dh E (1) e e1 1.0 e2 4.0 Eh E1 j L L3 2.4 1.6 m 4.3 Q 2.1 1.8 v w x
Z (1) 2.4 1.8
17.0 4.6 1.15 1.65 0.60 0.5 30.4 28.0 12 15.5 4.3 0.85 1.35 0.45 0.3 29.9 27.5
12.2 2.0 11.8
6 10.15 1.85 8.4 9.85 1.65 7.0
0.6 0.25 0.03 45
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT521-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 99-01-05
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
16 SOLDERING 16.1 Introduction to soldering through-hole mount packages
TDA8591J
The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. 16.3 Manual soldering
This text gives a brief insight to wave, dip and manual soldering. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board. 16.2 Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joints for more than 5 seconds. 16.4
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods SOLDERING METHOD PACKAGE DIPPING WAVE suitable(1)
DBS, DIP, HDIP, SDIP, SIL Note
suitable
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
17 DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
TDA8591J
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 18 DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 19 DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Jan 14
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Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
NOTES
TDA8591J
2002 Jan 14
34
Philips Semiconductors
Preliminary specification
4 x 44 W into 4 or 4 x 75 W into 2 quad BTL car radio power amplifier
NOTES
TDA8591J
2002 Jan 14
35
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/01/pp36
Date of release: 2002
Jan 14
Document order number:
9397 750 08682

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